 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 1 p x f s . 0 4 ' & 5 11 735 ( f o f s b m % f t d s j q u j p o ' f b u v s f t 1 j o $ p o g j h v s b u j p o & r v j w b m f o u $ j s d v j u " c t p m v u f . b y j n v n 3 b u j o h t 1 j o " t t j h o n f o u " q q m j d b u j p o t
4 4 4 ( % % % % 4 0 1 5 0 1 7 * & 8 1 * / / 6 . # & 3 1 * / / " . & ' 6 / $ 5 * 0 / ? ( 4 p v s d f ( b u f ? % s b j o
1 $ i b o o f m . 0 4 ' & 5 e f w j d f c v j m u j o ta=25 o c symbol ratings units vdss -20 v vgss 12 v id -5 a idp -20 a idr -5 a pd 2.5 w tch 150 o c tstg -55 ~ 150 o c ( note ) : when implemented on a glass epoxy pcb storage temperature reverse drain current continuous channel power dissipation (note) channel temperature drain - source voltage gate - source voltage drain current (dc) drain current (pulse) parameter + p-channel power mos fet dmos structure low on-state resistance : 0.075 ? (max) ultra high-speed switching sop-8 package notebook pcs cellular and portable phones on-board power supplies li-ion battery systems the xp132a1275sr is a p-channel power mos fet with low on-state resistance and ultra high-speed switching characteristics. because high-speed switching is possible, the ic can be efficiently set thereby saving energy. the small sop-8 package makes high density mounting possible. low on-state resistance : rds (on) = 0.075 ? ( vgs = -4.5v ) : rds (on) = 0.115 ? ( vgs = -2.5v ) ultra high-speed switching operational voltage : -2.5v high density mounting : sop-8 4 @ 9 1 " 4 3 1 . ?? 736 11 9 1 " 4 3 & m f d u s j d b m $ i b s b d u f s j t u j d t dc characteristics ta=25 c parameter symbol conditions min typ max units drain cut-off current idss vds = - 20v , vgs = 0v - 10 a gate-source leakage current igss vgs = 12v , vds = 0v 1 a gate-source cut-off voltage vgs (off ) id = -1ma , vds = - 10v - 0.5 - 1.2 v drain-source on-state resistance id = - 3a , vgs = - 4.5v 0.06 0.075 ? ( note ) id = - 3a , vgs = - 2.5v 0.092 0.115 ? forward transfer admittance ( note ) body drain diode forward voltage ( note ) : effective during pulse test. dynamic characteristics ta=25 c parameter symbol conditions min typ max units input capacitance ciss 770 pf output capacitance coss vds = - 10v , vgs = 0v 440 pf feedback capacitance crss f = 1 mhz 180 pf switching characteristics ta=25 c parameter symbol conditions min typ max units turn-on delay time td ( on ) 10 ns rise time tr vgs = - 5v , id = - 3a 25 ns turn-off delay time td ( off ) vdd = - 10v 45 ns fall time tf 40 ns thermal characteristics parameter symbol conditions min typ max units thermal resistance implement on a glass epoxy ( channel-ambience ) resin pcb c / w 50 rth ( ch-a ) vf if = - 5a , vgs = 0v v - 0.85 - 1.1 id = - 3a , vds = - 10v | yfs | rds ( on ) s8 4 @ 9 1 " 4 3 1 . ?? 737 11 9 1 " 4 3 5 z q j d b m 1 f s g p s n b o d f $ i b s b d u f s j t u j d t drain current :id (a) 7 7 7 7 7 7 7 drain current :id (a) ? ? drain-source on-state resistance vs. gate-source voltage " drain-source on-state resistance vs. drain current 7 h t 7 7 drain-source voltage :vds (v) gate-source voltage :vgs (v) drain current vs. drain-source voltage 1 v m t f 5 f t u 5 b ? 7 h t 7 5 b ? 7 e t 7 1 v m t f 5 f t u drain current vs. gate-source voltage * e " gate-source voltage :vgs (v) drain-source on-state resistance :rds (on) ( ) drain-source on-state resistance :rds (on) ( ) 1 v m t f 5 f t u 5 b ? drain current :id (a) 1 v m t f 5 f t u 5 b ? ambient temp. :topr ( ? ) 7 " " " ambient temp. :topr ( ? ) 7 h t 7 * e " 1 v m t f 5 f t u drain-source on-state resistance vs. ambient temperature drain-source on-state resistance :rds (on) ( ) gate-source cut-off voltage variance vs. ambient temperature gate-source cut-off voltage variance :vgs (off) variance (v) 7 e t 7 * e n " 4 @ 9 1 " 4 3 1 . ?? 738 11 9 1 " 4 3 capacitance:c (pf) $ p t t $ j t t $ s t t switching time:t (ns) u s u e p o u e p g g u g drain-source voltage:vds (v) drain current:id (a) 7 h t 7 g . ) [ 5 b ? 7 h t 7 7 e e 7 1 8 t e v u z 5 b ? switching time vs. drain current capacitance vs. drain-source voltage 7 e t 7 * e " 5 b ? standardized transition thermal resistance vs. pulse width 3 u i d i b ? 8 * n q m f n f o u f e p o b h m b t t f q p y z 1 $ # pulse width:pw (sec) standardized transition thermal resistance: s(t) 4 j o h m f 1 v m t f gate-source voltage vs. gate charge reverse drain current vs. source-drain voltage gate-source voltage:vgs (v) gate charge:qg (nc) source-drain voltage:vsd (v) 5 b ? 1 v m t f 5 f t u reverse drain current:idr (a) 7 h t 7 7 7 7 4 @ 9 1 " 4 3 1 . ?? |
Price & Availability of 0724XP132A1275SR
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |